MSW16N50 50 0v n - channel mosfet publication order number: [ msw 16 n50 ] ? bruckewell technology corporation rev. a - 2014 description this latest technology has been especially designed to minimize on - state resistance, have a high rugged avalanche characteristics. these devices are well suited for high efficiency switch mode power supplies. features ? originative new design ? very low intrinsic capacitances ? excellent switching characteristics ? 100% eas test ? extended safe operating area ? rohs compliant package a pplication ? high current, high speed switching ? pfc (power factor correction) ? smps (switched mode power su pplies) packing & order information 3 0/tube ; 540 /box graphic symbol to - 247 to - 3p
MSW16N50 50 0v n - channel mosfet publication order number: [ msw 16 n50 ] ? bruckewell technology corporation rev. a - 2014 maximum ratings and electrical characteristics absolute maximum ratings (tc=25c unless otherwise noted) symbol parameter value unit v ds dr ain - source voltage 500 v v gs gate - source voltage 30 v i d drain current - continuous (tc=25 c ) 16 a drain current - continuous (tc= 100 c ) 10 a i dm drain current pulsed 64 a e as s ingle pulsed avalanche energy 896 mj e ar repetitive avalanche energy 20.5 mj p d power dissipation ( tc = 25 c) - derate above 25 c 205 w 2.1 w/ c t j ,t stg operating and storage temperature range - 55 to +175 c note: 1. pulse width limited by maximum junction temperature 2. duty cycle 1% thermal resistance characteristic s symbol parameter max. unit s r thjc typical thermal resistance 0.64 c /w r ja 40 static characteristics symbol test conditions min typ. max. unit s v gs v ds = v gs , i d = 250a 3.0 -- 5.0 v * r ds(on) v gs = 10 v , i d = 8 a -- 0.3 0.38 b v dss v gs = 0 v , i d =250a 500 -- -- v b v dss / t j i d = 250a, referenced to 25 c -- 0.5 -- v/ c i dss v ds = 50 0 v , v gs = 0 v v ds = 40 0 v , v gs = 0 v , v c = 125 c -- -- 1 10 u a i gss v gs = 30 -- -- 100 n a
MSW16N50 50 0v n - channel mosfet publication order number: [ msw 16 n50 ] ? bruckewell technology corporation rev. a - 2014 dynamic characteristics symbol test conditions min typ. max. unit s t d(on) v ds = 250 v, i d = 16 a, r g = 25 -- 50 115 ns t r -- 180 396 ns t d(off) -- 130 273 ns tf -- 100 220 ns q g v ds = 40 0 v,i d = 16 a, v gs = 10 v -- 60 78 nc q gs -- 14 18 nc q g d -- 28 36 nc c iss v ds = 25 v, v gs = 0 v, f = 1.0mhz - - 2300 2990 pf c oss -- 330 429 pf c rss -- 35 46 pf i s -- -- 16 a i sm -- -- 64 v sd i s = i f , v gs = 0 v -- -- 1.5 v t rr i s = i f , dif/dt = 100a/s -- 340 -- ns q rr -- 3.4 -- uc notes; 1. repetitive rating: pulse width limited by maximum junctio n temperature 2. l = 7 mh, i as = 16 a, v dd =5 0 v, r g =25 , starting t j =25 3 . i sd Q 16a , di/dt Q 2 00a/ s,v dd Q bv dss , starting t j =25 4 . pulse test: pulse width Q 300 s, duty cycle Q 2% 5 . essentially independent of operating temperature
MSW16N50 50 0v n - channel mosfet publication order number: [ msw 16 n50 ] ? bruckewell technology corporation rev. a - 2014 typical characteristics f ig.1 - on region characteristics fig. 2 - transfer characteristics fig.3 - on resistance variation vs drain current and gate voltage fig.4 - body diode forward voltage variation with source current and temperature fig.5 - capacitance characteristics fig.6 - gate charge characteristics
MSW16N50 50 0v n - channel mosfet publication order number: [ msw 16 n50 ] ? bruckewell technology corporation rev. a - 2014 typical characteristics fig. 7 - breakdown voltage variation vs temperature fig. 8 - on - resistance variation vs temperature fig. 9 - maximum safe operating area fig. 10 - maximum drain current vs case temperature fig.11 - transient thermal response curve
MSW16N50 50 0v n - channel mosfet publication order number: [ msw 16 n50 ] ? bruckewell technology corporation rev. a - 2014 characteristics test circuit & waveform fig 12. resistive switching test circuit & waveforms fig 13. gate charge test circuit & waveform fig 14. unclamped inductive switching test circuit & waveforms
MSW16N50 50 0v n - channel mosfet publication order number: [ msw 16 n50 ] ? bruckewell technology corporation rev. a - 2014 fig 15. peak diode recovery d v/dt test circuit & waveforms
MSW16N50 50 0v n - channel mosfet publication order number: [ msw 16 n50 ] ? bruckewell technology corporation rev. a - 2014 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. bruckewell technology inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, bruckewell), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. bruckewell makes no warranty, r epresentation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, bruckewell disclaims (i) any and all liability arising out of t he application or use of any product. (ii) any and all liability, including without limitation special, consequential or incidental damages. (iii) any and all implied warranties, including warranties of fitness for particular purpose, non - infringement and merchantability. statements regarding the suitability of products for certain types of applications are based on bruckewells knowledge of typical requirements that are often placed on bruckewell products in generic applications. such statements are not b inding statements about the suitability of products for a particular application. it is the customers responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular appli cation. parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. product specifications do not expand or otherwise modify bruckewells terms and conditions of purchase, including but no t limited to the warranty expressed therein.
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